EFFECTS OF SINTERING PROTOCOL AND ER:YAG LASER APPLICATION MODE ON THE BOND STRENGTH OF MONOLITHIC ZIRCONIA

Merve HABERAL, Hasibe Sevilay BAHADIR

Meandros Medical and Dental Journal - 2026;27(3):447-455

Department of Restorative Dentistry, School of Dentistry, Kırıkkale University, Kırıkkale, TÜRKİYE

 

Objective: To evaluate the combined effects of slow and rapid sintering protocols and Er:YAG laser application modes (non-contact and slight-contact) at different power settings on the microshear bond strength (muSBS) of monolithic 5Y-TZP zirconia to resin cement. Materials and Methods: Eighty rectangular 5Y-TZP zirconia specimens were fabricated and randomly assigned to two sintering protocols: slow and rapid (n = 40 each). Specimens were further subdivided into five surface treatment groups (n = 8): control, 3 W non-contact, 5 W non-contact, 3 W slight-contact, and 5 W slight-contact Er:YAG laser irradiation. Following surface treatment, a 10-MDP-containing universal adhesive was applied, and composite resin cylinders were bonded. muSBS testing was performed using a universal testing machine. Data were analyzed using two-way ANOVA and Bonferroni post hoc tests (alpha = 0.05). Results: Both sintering protocol (p < 0.001) and surface treatment procedure (p < 0.001) significantly influenced bond strength, whereas their interaction was not significant (p = 0.758). Rapid sintering yielded significantly higher muSBS values than slow sintering. The highest bond strength was observed in the 5 W slight-contact laser group following rapid sintering (156.2 +/- 10.5 MPa), whereas the lowest values were recorded in the 3 W non-contact laser group with slow sintering (85.42 +/- 4.5 MPa). The 5 W slight-contact laser group showed the highest bond strength among surface-treatment groups (p < 0.05). Conclusion: Both sintering protocol and laser application mode significantly affect zirconia-resin bond strength. Slight-contact Er:YAG laser irradiation may improve bonding performance, particularly under rapid sintering conditions.